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onsemi-2N6520RLRAG GP BJT Trans GP BJT PNP 350V 0.5A 625mW 3-Pin TO-92 T/R
Discrete Semiconductor Products

2N6520RLRAG

Obsolete
ON Semiconductor

TRANS GP BJT PNP 350V 0.5A 625MW 3-PIN TO-92 T/R

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onsemi-2N6520RLRAG GP BJT Trans GP BJT PNP 350V 0.5A 625mW 3-Pin TO-92 T/R
Discrete Semiconductor Products

2N6520RLRAG

Obsolete
ON Semiconductor

TRANS GP BJT PNP 350V 0.5A 625MW 3-PIN TO-92 T/R

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

Specification2N6520RLRAG
Current - Collector (Ic) (Max) [Max]500 mA
Current - Collector Cutoff (Max) [Max]50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]20
Frequency - Transition200 MHz
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-92-3 Long Body, Formed Leads, TO-226-3
Power - Max [Max]625 mW
Supplier Device PackageTO-92
Supplier Device PackageTO-226
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic1 V
Voltage - Collector Emitter Breakdown (Max) [Max]350 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
ArrowN/A 1$ 0.11

Description

General part information

2N6520T Series

The High Voltage PNP Bipolar Junction Transistor is designed for general purpose switching applications. The device is housed in the TO-92 package, which is designed for medium power applications.

Documents

Technical documentation and resources