FDI030N06

Obsolete

ON Semiconductor

N-CHANNEL POWERTRENCH® MOSFET 60V, 193A, 3.2MΩ

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DocumentsDatasheet Package Drawing-418AV-I2PAK (TO-262 3 LD)

Discrete Semiconductor Products

FDI030N06

Obsolete

ON Semiconductor

N-CHANNEL POWERTRENCH® MOSFET 60V, 193A, 3.2MΩ

Deep-Dive with AI

DocumentsDatasheet Package Drawing-418AV-I2PAK (TO-262 3 LD)

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FDI030N06

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	151 nC
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max) [Max]	231 W
Rds On (Max) @ Id, Vgs [Max]	3.2 mOhm
Supplier Device Package	TO-262 (I2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

FDI030N06 Series

N-Channel PowerTrench® MOSFET 60V, 193A, 3.2mΩ

Part	Vgs (Max)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs [Max]	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Drain to Source Voltage (Vdss)	Package / Case	FET Type	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]
ON Semiconductor FDI030N06	20 V	4.5 V	3.2 mOhm	TO-262 (I2PAK)	10 V	120 A	151 nC	Through Hole	60 V	I2PAK TO-262-3 Long Leads TO-262AA	N-Channel	MOSFET (Metal Oxide)	-55 °C	175 ░C	231 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FDI030N06 Series

This N-Channel MOSFET is produced using a PowerTrench®process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.