Discrete Semiconductor Products

MCGD30P02-TP

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MOSFET 2P-CH 20V 30A DFN

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Discrete Semiconductor Products

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MOSFET 2P-CH 20V 30A DFN

Technical Specifications

Parameters and characteristics for this part

Specification	MCGD30P02-TP

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	20 V
Gate Charge (Qg) (Max) @ Vgs [Max]	72.8 nC
Input Capacitance (Ciss) (Max) @ Vds	2992 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power - Max [Max]	21 W
Rds On (Max) @ Id, Vgs	19 mOhm
Supplier Device Package	DFN3333-D
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

Part	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Mounting Type	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Supplier Device Package	Power - Max [Max]	Configuration	Rds On (Max) @ Id, Vgs
Micro Commercial Components MCGD30P02-TP	1 V	2992 pF	-55 °C	150 °C	MOSFET (Metal Oxide)	Surface Mount	8-PowerVDFN	72.8 nC	30 A	20 V	DFN3333-D	21 W	2 P-Channel	19 mOhm

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General part information

Mosfet Array 20V 30A (Ta) 21W Surface Mount DFN3333-D

Technical documentation and resources