Discrete Semiconductor Products

BSP230,135

Obsolete

MOSFET P-CH 300V 210MA SOT223

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 300V 210MA SOT223

Technical Specifications

Parameters and characteristics for this part

Specification	BSP230,135

Current - Continuous Drain (Id) @ 25°C	210 mA
Drain to Source Voltage (Vdss)	300 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	90 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max)	1.5 W
Rds On (Max) @ Id, Vgs	17 Ohm
Supplier Device Package	SOT-223
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.55 V

Part	Package / Case	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	FET Type	Current - Continuous Drain (Id) @ 25°C	Operating Temperature	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Technology	Power Dissipation (Max)
Freescale Semiconductor - NXP BSP230,135	TO-261-4 TO-261AA	17 Ohm	300 V	P-Channel	210 mA	150 °C	SOT-223	90 pF	20 V	2.55 V	10 V	Surface Mount	MOSFET (Metal Oxide)	1.5 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 300 V 210mA (Ta) 1.5W (Ta) Surface Mount SOT-223

Technical documentation and resources