Discrete Semiconductor Products

MUN2215T1G

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BIPOLAR PRE-BIASED / DIGITAL TRANSISTOR, BRT, SINGLE NPN, 50 V, 100 MA

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Discrete Semiconductor Products

Active

BIPOLAR PRE-BIASED / DIGITAL TRANSISTOR, BRT, SINGLE NPN, 50 V, 100 MA

Technical Specifications

Parameters and characteristics for this part

Specification	MUN2215T1G

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	160 hFE
Mounting Type	Surface Mount
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	338 mW
Resistor - Base (R1)	10 kOhms
Supplier Device Package	SC-59
Transistor Type	NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]	Mounting Type	Package / Case	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Resistor - Base (R1)	Vce Saturation (Max) @ Ib, Ic
ON Semiconductor MUN2215T1G	50 V	100 mA	NPN - Pre-Biased	160 hFE	338 mW	Surface Mount	SC-59 SOT-23-3 TO-236-3	500 nA	SC-59	10 kOhms	250 mV

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General part information

Simplifies Circuit Design

Reduces Board Space

Reduces Component Count

Technical documentation and resources