TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Discrete Semiconductor Products

BC33725TAR

Active

ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 45 V, 800 MA, 625 MW, TO-92, THROUGH HOLE

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet Datasheet +2

Discrete Semiconductor Products

BC33725TAR

Active

ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 45 V, 800 MA, 625 MW, TO-92, THROUGH HOLE

Deep-Dive with AI

DocumentsDatasheet Datasheet +2

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	BC33725TAR

Current - Collector (Ic) (Max) [Max]	800 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	160
Frequency - Transition	100 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	625 mW
Supplier Device Package	TO-92-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	700 mV
Voltage - Collector Emitter Breakdown (Max)	45 V

BC337(LEGACY%20FAIRCHILD) Series

NPN Bipolar Transistor

Part	Supplier Device Package	Mounting Type	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max)	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Frequency - Transition	Package / Case	Transistor Type	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Operating Temperature	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor BC33716TAR	TO-92-3	Through Hole	100 nA	45 V	625 mW	100 hFE	100 MHz	TO-226-3 TO-92-3	NPN	800 mA	700 mV	150 °C
ON Semiconductor BC33716	TO-92-3	Through Hole	100 nA	45 V	625 mW	100 hFE	100 MHz	TO-226-3 TO-92-3	NPN	800 mA	700 mV	150 °C
ON Semiconductor BC33725TAR	TO-92-3	Through Hole	100 nA	45 V	625 mW	160	100 MHz	TO-226-3 TO-92-3	NPN	800 mA	700 mV	150 °C
ON Semiconductor BC337-25ZL1	TO-92	Through Hole	100 nA	45 V	625 mW	160	210 MHz	Formed Leads TO-226-3 TO-92-3 Long Body	NPN	800 mA	700 mV		TO-226	-55 °C	150 °C
ON Semiconductor BC33716TF	TO-92-3	Through Hole	100 nA	45 V	625 mW	100 hFE	100 MHz	TO-226-3 TO-92-3	NPN	800 mA	700 mV	150 °C
ON Semiconductor BC337-16ZL1G	TO-92	Through Hole	100 nA	45 V	625 mW	100 hFE	210 MHz	Formed Leads TO-226-3 TO-92-3 Long Body	NPN	800 mA	700 mV		TO-226	-55 °C	150 °C
ON Semiconductor BC337	TO-92-3	Through Hole	100 nA	45 V	625 mW	100 hFE	210 MHz	TO-226-3 TO-92-3	NPN	800 mA	700 mV			-55 °C	150 °C
ON Semiconductor BC33725TFR	TO-92-3	Through Hole	100 nA	45 V	625 mW	160	100 MHz	TO-226-3 TO-92-3	NPN	800 mA	700 mV	150 °C
ON Semiconductor BC337G	TO-92	Through Hole	100 nA	45 V	625 mW	100 hFE	210 MHz	TO-226-3 TO-92-3 Long Body	NPN	800 mA	700 mV		TO-226	-55 °C	150 °C
ON Semiconductor BC33725_J35Z	TO-92-3	Through Hole	100 nA	45 V	625 mW	160	100 MHz	TO-226-3 TO-92-3	NPN	800 mA	700 mV	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	2000	$ 0.07
		4000	$ 0.05
		10000	$ 0.05
Digikey	Cut Tape (CT)	1	$ 0.31
		10	$ 0.19
		100	$ 0.12
		500	$ 0.09
		1000	$ 0.08
	Tape & Box (TB)	2000	$ 0.07
		4000	$ 0.06
		6000	$ 0.06
		10000	$ 0.05
		14000	$ 0.05
		20000	$ 0.05
		50000	$ 0.04
		100000	$ 0.04
		200000	$ 0.04
Newark	Each	2500	$ 0.05
		10000	$ 0.05
		25000	$ 0.04

Description

General part information

BC337(LEGACY%20FAIRCHILD) Series

The NPN Bipolar Transistor is designed for use in linear and switching applications. The device is housed in the TO-92 package, which is designed for medium power applications.

Documents

Technical documentation and resources

Datasheet

Package Drawing-135AR-TO-92 3 4.83x4.76 Leadformed

Package Drawing

Product Change Notice EN

Datasheet