Discrete Semiconductor Products

SQ4940AEY-T1_BE3

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MOSFET 2N-CH 40V 8A 8SOIC

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Discrete Semiconductor Products

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MOSFET 2N-CH 40V 8A 8SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	SQ4940AEY-T1_BE3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	40 V
Gate Charge (Qg) (Max) @ Vgs	43 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	741 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	4 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	24 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

Part	Mounting Type	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]	Grade	Rds On (Max) @ Id, Vgs	Package / Case	Package / Case [y]	Package / Case [x]	Technology	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Qualification	Supplier Device Package	Configuration	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	FET Feature
Vishay General Semiconductor - Diodes Division SQ4940AEY-T1_BE3	Surface Mount	40 V	-55 °C	175 ░C	4 W	Automotive	24 mOhm	8-SOIC	3.9 mm	0.154 in	MOSFET (Metal Oxide)	8 A	2.5 V	AEC-Q101	8-SOIC	2 N-Channel (Dual)	741 pF	43 nC
Vishay General Semiconductor - Diodes Division SQ4940AEY-T1_GE3	Surface Mount	40 V	-55 °C	175 ░C	4 W	Automotive	24 mOhm	8-SOIC	3.9 mm	0.154 in	MOSFET (Metal Oxide)	8 A	2.5 V	AEC-Q101	8-SOIC	2 N-Channel (Dual)	741 pF	43 nC	Logic Level Gate

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General part information

Mosfet Array 40V 8A (Tc) 4W (Tc) Surface Mount 8-SOIC

Technical documentation and resources