Discrete Semiconductor Products
RQ5E070BNTCL
ActiveRohm Semiconductor
MOSFET, N-CH, 30V, 7A, 150DEG C, 0.76W
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Discrete Semiconductor Products
RQ5E070BNTCL
ActiveRohm Semiconductor
MOSFET, N-CH, 30V, 7A, 150DEG C, 0.76W
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | RQ5E070BNTCL |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 7 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SC-96 |
| Power Dissipation (Max) [Max] | 1 W |
| Rds On (Max) @ Id, Vgs | 16.1 mOhm |
| Supplier Device Package | TSMT3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
RQ5E070BN Series
RQ5E070BN is low on-resistance and small surface mount package MOSFET for switching application.
Documents
Technical documentation and resources