Discrete Semiconductor Products

SIR626DP-T1-RE3

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MOSFET N-CH 60V 100A PPAK SO-8

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Discrete Semiconductor Products

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MOSFET N-CH 60V 100A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SIR626DP-T1-RE3

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	78 nC
Input Capacitance (Ciss) (Max) @ Vds	5130 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	104 W
Rds On (Max) @ Id, Vgs [Max]	1.7 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.4 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Mounting Type	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Technology	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	FET Type	Rds On (Max) @ Id, Vgs [Max]
Vishay General Semiconductor - Diodes Division SIR626ADP-T1-RE3	3770 pF	PowerPAK® SO-8	Surface Mount	3.5 V	40.4 A	165 A	1.75 mOhm	MOSFET (Metal Oxide)	6.25 W 104 W	6 V 10 V	-55 °C	150 °C	PowerPAK® SO-8	20 V	83 nC	60 V	N-Channel
Vishay General Semiconductor - Diodes Division SIR626DP-T1-RE3	5130 pF	PowerPAK® SO-8	Surface Mount	3.4 V	100 A			MOSFET (Metal Oxide)	104 W	6 V 10 V	-55 °C	150 °C	PowerPAK® SO-8	20 V	78 nC	60 V	N-Channel	1.7 mOhm

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General part information

N-Channel 60 V 100A (Tc) 104W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources