Discrete Semiconductor Products

PHB33NQ20T,118

LTB

MOSFET N-CH 200V 32.7A D2PAK

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Discrete Semiconductor Products

LTB

MOSFET N-CH 200V 32.7A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	PHB33NQ20T,118

Current - Continuous Drain (Id) @ 25°C	32.7 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	32.2 nC
Input Capacitance (Ciss) (Max) @ Vds	1870 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	230 W
Rds On (Max) @ Id, Vgs [Max]	77 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Technology	FET Type	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Package / Case	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package
Freescale Semiconductor - NXP PHB33NQ20T,118	MOSFET (Metal Oxide)	N-Channel	77 mOhm	1870 pF	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	200 V	10 V	230 W	20 V	32.7 A	-55 °C	175 ░C	32.2 nC	D2PAK

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General part information

N-Channel 200 V 32.7A (Tc) 230W (Tc) Surface Mount D2PAK

Technical documentation and resources