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J113RL1
Discrete Semiconductor Products

MPS3563RLRAG

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ON Semiconductor

SMALL SIGNAL BIPOLAR TRANSISTOR

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J113RL1
Discrete Semiconductor Products

MPS3563RLRAG

Active
ON Semiconductor

SMALL SIGNAL BIPOLAR TRANSISTOR

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationMPS3563RLRAG
Current - Collector (Ic) (Max) [Max]50 mA
Current - Collector Cutoff (Max) [Max]0.01 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]20 hFE
Frequency - Transition600 MHz
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-92-3 Long Body, TO-226-3
Power - Max [Max]350 mW
Supplier Device PackageTO-92
Supplier Device PackageTO-226
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max) [Max]12 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 3806$ 0.08

Description

General part information

MPS3563 Series

NPN Silicon

Documents

Technical documentation and resources