Discrete Semiconductor Products

SI7108DN-T1-E3

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MOSFET N-CH 20V 14A PPAK1212-8

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Discrete Semiconductor Products

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MOSFET N-CH 20V 14A PPAK1212-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7108DN-T1-E3

Current - Continuous Drain (Id) @ 25°C	14 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	30 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8
Power Dissipation (Max)	1.5 W
Rds On (Max) @ Id, Vgs [Max]	4.9 mOhm
Supplier Device Package	PowerPAK® 1212-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id	2 V

Part	Supplier Device Package	Package / Case	Drain to Source Voltage (Vdss)	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Mounting Type	Rds On (Max) @ Id, Vgs [Max]	Vgs (Max)	Technology	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id
Vishay General Semiconductor - Diodes Division SI7108DN-T1-E3	PowerPAK® 1212-8	PowerPAK® 1212-8	20 V	N-Channel	4.5 V 10 V	14 A	1.5 W	Surface Mount	4.9 mOhm	16 V	MOSFET (Metal Oxide)	30 nC	-55 °C	150 °C	2 V
Vishay General Semiconductor - Diodes Division SI7108DN-T1-GE3	PowerPAK® 1212-8	PowerPAK® 1212-8	20 V	N-Channel	4.5 V 10 V	14 A	1.5 W	Surface Mount	4.9 mOhm	16 V	MOSFET (Metal Oxide)	30 nC	-55 °C	150 °C	2 V

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General part information

N-Channel 20 V 14A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

Technical documentation and resources