Specification	NTR4101PT1G

Current - Continuous Drain (Id) @ 25°C	1.8 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	8.5 nC
Input Capacitance (Ciss) (Max) @ Vds	675 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	420 mW
Rds On (Max) @ Id, Vgs	85 mOhm
Supplier Device Package	SOT-23-3 (TO-236)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1.2 V

NTR4101P Series

Single P−Channel Trench Power MOSFET -20V, -3.2A, 85mΩ

Part	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Mounting Type	Package / Case	Vgs (Max)	Vgs(th) (Max) @ Id	Technology	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	FET Type	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor NTR4101PT1G	8.5 nC	1.8 V 4.5 V	-55 °C	150 °C	420 mW	675 pF	SOT-23-3 (TO-236)	Surface Mount	SC-59 SOT-23-3 TO-236-3	8 V	1.2 V	MOSFET (Metal Oxide)	85 mOhm	20 V	P-Channel	1.8 A
ON Semiconductor NTR4101PT1H	8.5 nC	1.8 V 4.5 V	-55 °C	150 °C	420 mW	675 pF	SOT-23-3 (TO-236)	Surface Mount	SC-59 SOT-23-3 TO-236-3	8 V	1.2 V	MOSFET (Metal Oxide)	85 mOhm	20 V	P-Channel	1.8 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This is a 20 V P-Channel Power MOSFET.

Technical documentation and resources