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SOT-223 (TO-261)
Discrete Semiconductor Products

NSS60601MZ4T1G

Active
ON Semiconductor

LOW V<SUB>CE(SAT)</SUB> TRANSISTOR, NPN, 60 V, 6.0 A

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DocumentsDatasheetPackage Drawing-0.0318-SOT-223 (TO-261) 4 LEAD+3
SOT-223 (TO-261)
Discrete Semiconductor Products

NSS60601MZ4T1G

Active
ON Semiconductor

LOW V<SUB>CE(SAT)</SUB> TRANSISTOR, NPN, 60 V, 6.0 A

Deep-Dive with AI

DocumentsDatasheetPackage Drawing-0.0318-SOT-223 (TO-261) 4 LEAD+3

Technical Specifications

Parameters and characteristics for this part

SpecificationNSS60601MZ4T1G
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]120
Frequency - Transition100 MHz
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-261AA, TO-261-4
Power - Max [Max]800 mW
Supplier Device PackageSOT-223 (TO-261)
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic300 mV
Voltage - Collector Emitter Breakdown (Max)60 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.59
10$ 0.51
100$ 0.36
500$ 0.30
Digi-Reel® 1$ 0.59
10$ 0.51
100$ 0.36
500$ 0.30
Tape & Reel (TR) 1000$ 0.25
2000$ 0.23
5000$ 0.21
10000$ 0.20
25000$ 0.20
NewarkEach (Supplied on Cut Tape) 1$ 0.85
10$ 0.55
25$ 0.49
50$ 0.43
100$ 0.38
250$ 0.34
500$ 0.31
ON SemiconductorN/A 1$ 0.21

Description

General part information

NSS60601MZ4 Series

The combination of low saturation voltage and high gain makes this Bipolar Transistor an ideal device for high speed switching applications where power saving is a concern.