Discrete Semiconductor Products

MJF2955

Obsolete

PNP BIPOLAR POWER TRANSISTOR

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Discrete Semiconductor Products

Obsolete

PNP BIPOLAR POWER TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

Specification	MJF2955

Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	20
Frequency - Transition	2 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power - Max [Max]	2 W
Supplier Device Package	TO-220FP
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	2.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	90 V

PNP Bipolar Power Transistor

Part	Vce Saturation (Max) @ Ib, Ic	Transistor Type	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Package / Case	Frequency - Transition	Operating Temperature [Min]	Operating Temperature [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	Supplier Device Package
ON Semiconductor MJF2955	2.5 V	PNP	Through Hole	20	1 µA	TO-220-3 Full Pack	2 MHz	-55 °C	150 °C	90 V	2 W	TO-220FP
ON Semiconductor MJF2955G	2.5 V	PNP	Through Hole	20	1 µA	TO-220-3 Full Pack	2 MHz	-55 °C	150 °C	90 V	2 W	TO-220FP

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

The Bipolar Power Transistor is specifically designed for general purpose amplifier and switching applications.