Specification	MTD6N20ET4

Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	200 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	21 nC
Input Capacitance (Ciss) (Max) @ Vds	480 pF
Mounting Type	Surface Mount
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Rds On (Max) @ Id, Vgs	700 mOhm
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	4 V

MTD6N20E Series

Power MOSFET 200V 6A 700 mOhm Single N-Channel DPAK

Part	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Supplier Device Package	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Technology	Rds On (Max) @ Id, Vgs [Max]	FET Type	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs
ON Semiconductor MTD6N15T4G	6 A	1200 pF	150 °C	-65 °C	150 V	1.25 W 20 W	4.5 V	DPAK	Surface Mount	30 nC	MOSFET (Metal Oxide)	300 mOhm	N-Channel	20 V	10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3
ON Semiconductor MTD6N20ET5G	6 A	480 pF	150 °C	-55 °C	200 V	1.75 W 50 W	4 V	DPAK	Surface Mount		MOSFET (Metal Oxide)		N-Channel	20 V	10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	21 nC	700 mOhm
ON Semiconductor MTD6N20ET4	6 A	480 pF			200 V		4 V	DPAK	Surface Mount		MOSFET (Metal Oxide)		N-Channel			DPAK (2 Leads + Tab) SC-63 TO-252-3	21 nC	700 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

MTD6N20E Series

This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.