Specification	MCH6663-TL-H

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C [Max]	1.8 A
Current - Continuous Drain (Id) @ 25°C [Min]	1.5 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	2 nC
Input Capacitance (Ciss) (Max) @ Vds	88 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-SMD, Flat Leads
Power - Max [Max]	800 mW
Rds On (Max) @ Id, Vgs	188 mOhm
Supplier Device Package	6-MCPH
Technology	MOSFET (Metal Oxide)

MCH6663 Series

Complementary Dual Power MOSFET 30V

Part	FET Feature	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C [Min]	Current - Continuous Drain (Id) @ 25°C [Max]	Gate Charge (Qg) (Max) @ Vgs	Technology	Configuration	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]	Drain to Source Voltage (Vdss)	Package / Case
ON Semiconductor MCH6663-TL-H	Logic Level Gate	6-MCPH	1.5 A	1.8 A	2 nC	MOSFET (Metal Oxide)	N and P-Channel	88 pF	188 mOhm	Surface Mount	-55 °C	150 °C	800 mW	30 V	6-SMD Flat Leads

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

MCH6663 is a Complementary Dual Power MOSFET for General-Purpose Switching Device Applications