Specification	FDC658AP

Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	8.1 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	470 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Rds On (Max) @ Id, Vgs	50 mOhm
Supplier Device Package	SuperSOT™-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	3 V

FDC658AP Series

Single P-Channel Logic Level PowerTrench® MOSFET, -30V, -4A, 50mΩ

Part	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Mounting Type	Vgs(th) (Max) @ Id	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Package / Case	Technology
ON Semiconductor FDC658APG
ON Semiconductor FDC658AP	50 mOhm	470 pF	30 V	-55 °C	150 °C	P-Channel	Surface Mount	3 V	25 V	8.1 nC	4.5 V 10 V	4 A	SuperSOT™-6	SOT-23-6 Thin TSOT-23-6	MOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This P-Channel Logic Level MOSFET is produced using an advanced PowerTrench®process. It has been optimized for battery power management applications.

Technical documentation and resources