Discrete Semiconductor Products

RGP20J-E3/73

Obsolete

DIODE GEN PURP 600V 2A GP20

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Discrete Semiconductor Products

Obsolete

DIODE GEN PURP 600V 2A GP20

Technical Specifications

Parameters and characteristics for this part

Specification	RGP20J-E3/73

Current - Average Rectified (Io)	2 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	Axial, DO-27, DO-201AA
Reverse Recovery Time (trr)	250 ns
Speed	200 mA, 500 ns
Supplier Device Package	GP20
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.3 V

Part	Technology	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Speed	Current - Average Rectified (Io)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Current - Reverse Leakage @ Vr	Supplier Device Package	Reverse Recovery Time (trr)	Grade	Qualification
Vishay General Semiconductor - Diodes Division RGP20J-E3/73	Standard	Through Hole	600 V	1.3 V	200 mA 500 ns	2 A	175 ░C	-65 C	Axial DO-201AA DO-27	5 µA	GP20	250 ns
Vishay General Semiconductor - Diodes Division RGP20JHE3/54	Standard	Through Hole	600 V	1.3 V	200 mA 500 ns	2 A	175 ░C	-65 C	Axial DO-201AA DO-27	5 µA	GP20	250 ns	Automotive	AEC-Q101

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 600 V 2A Through Hole GP20

Technical documentation and resources