Discrete Semiconductor Products

PJS6405_S1_00001

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MOSFETS 30V P-CHANNEL ENHANCEMENT MODE MOSFET

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Discrete Semiconductor Products

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MOSFETS 30V P-CHANNEL ENHANCEMENT MODE MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	PJS6405_S1_00001

Current - Continuous Drain (Id) @ 25°C	4.6 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	5.2 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	417 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-6
Power Dissipation (Max)	2 W
Rds On (Max) @ Id, Vgs	72 mOhm
Supplier Device Package	SOT-23-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.1 V

Part	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Technology	Mounting Type	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Package / Case	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs
Panjit International Inc. PJS6405_S1_00001	4.6 A	2.1 V	MOSFET (Metal Oxide)	Surface Mount	30 V	150 °C	-55 °C	417 pF	72 mOhm	2 W	P-Channel	4.5 V 10 V	SOT-23-6	SOT-23-6	20 V	5.2 nC

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General part information

RDs(ON) , VGS@-10V. lD@-4.6A<72mO

RDs(ON) , VGs@-4.5V, ID@-3.0A<96mO

Advanced Trench Process Technology

Technical documentation and resources