Discrete Semiconductor Products

TP0202K-T1-E3

Obsolete

MOSFET P-CH 30V 385MA SOT23-3

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET P-CH 30V 385MA SOT23-3

Technical Specifications

Parameters and characteristics for this part

Specification	TP0202K-T1-E3

Current - Continuous Drain (Id) @ 25°C	385 mA
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	1 nC
Input Capacitance (Ciss) (Max) @ Vds	31 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]	350 mW
Rds On (Max) @ Id, Vgs	1.4 Ohm
Supplier Device Package	SOT-23-3 (TO-236)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	FET Type	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Mounting Type	Technology	Supplier Device Package	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]
Vishay General Semiconductor - Diodes Division TP0202K-T1-E3	P-Channel	20 V	-55 °C	150 °C	1.4 Ohm	1 nC	4.5 V 10 V	385 mA	30 V	31 pF	SC-59 SOT-23-3 TO-236-3	Surface Mount	MOSFET (Metal Oxide)	SOT-23-3 (TO-236)	3 V	350 mW

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 30 V 385mA (Ta) 350mW (Ta) Surface Mount SOT-23-3 (TO-236)

Technical documentation and resources

No documents available