Discrete Semiconductor Products

NTUD3169CZT5G

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DUAL MOSFET, COMPLEMENTARY N AND P CHANNEL, 20 V, 20 V, 220 MA, 220 MA, 0.75 OHM

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Discrete Semiconductor Products

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DUAL MOSFET, COMPLEMENTARY N AND P CHANNEL, 20 V, 20 V, 220 MA, 220 MA, 0.75 OHM

Technical Specifications

Parameters and characteristics for this part

Specification	NTUD3169CZT5G

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25¯C	200 mA, 220 mA
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-963
Power - Max [Max]	125 mW
Rds On (Max) @ Id, Vgs	1.5 Ohm
Supplier Device Package	SOT-963
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

Complementary Small Signal MOSFET 20V

Part	Mounting Type	Technology	Current - Continuous Drain (Id) @ 25¯C	Drain to Source Voltage (Vdss)	Supplier Device Package	FET Feature	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Power - Max [Max]	Configuration
ON Semiconductor NTUD3169CZT5G	Surface Mount	MOSFET (Metal Oxide)	200 mA 220 mA	20 V	SOT-963	Logic Level Gate	SOT-963	-55 °C	150 °C	1.5 Ohm	1 V	125 mW	N and P-Channel

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General part information

This is a Complementary 20 V Small Signal MOSFET in a 1.0 x 1.0 mm SOT−963 Package.

Technical documentation and resources