Specification	NTMYS2D9N04CLTWG

Current - Continuous Drain (Id) @ 25°C	27 A, 110 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	35 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2100 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-1023, 4-LFPAK
Power Dissipation (Max)	3.7 W, 68 W
Rds On (Max) @ Id, Vgs	2.8 mOhm
Supplier Device Package	LFPAK4
Supplier Device Package [x]	5
Supplier Device Package [y]	6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

NTMYS2D9N04CL Series

Power MOSFET, 40 V, 2.8 mOhm, 110 A, Single N-Channel

Part	Vgs (Max)	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Package / Case	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Supplier Device Package [x]	Supplier Device Package	Supplier Device Package [y]	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type
ON Semiconductor NTMYS2D9N04CLTWG	20 V	3.7 W 68 W	27 A 110 A	2 V	35 nC	2.8 mOhm	SOT-1023 4-LFPAK	MOSFET (Metal Oxide)	2100 pF	4.5 V 10 V	N-Channel	5	LFPAK4	6	40 V	-55 °C	175 ░C	Surface Mount

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Industrial Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance.