
Discrete Semiconductor Products
SMUN5315DW1T1G
ActiveON Semiconductor
TRANS DIGITAL BJT NPN/PNP 50V 0.1A 385MW 6-PIN SC-88 T/R AUTOMOTIVE AEC-Q101
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Discrete Semiconductor Products
SMUN5315DW1T1G
ActiveON Semiconductor
TRANS DIGITAL BJT NPN/PNP 50V 0.1A 385MW 6-PIN SC-88 T/R AUTOMOTIVE AEC-Q101
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | SMUN5315DW1T1G |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 100 mA |
| Current - Collector Cutoff (Max) [Max] | 500 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 80 |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Power - Max [Max] | 187 mW |
| Qualification | AEC-Q101 |
| Resistor - Emitter Base (R2) | 47000 Ohms |
| Supplier Device Package | SC70-6, SC-88, SOT-363 |
| Transistor Type | 1 NPN, 1 PNP |
| Vce Saturation (Max) @ Ib, Ic | 250 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 50 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
MUN5315 Series
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 187mW Surface Mount SC-88/SC70-6/SOT-363
Documents
Technical documentation and resources