Specification	FCPF36N60NT

Current - Continuous Drain (Id) @ 25°C	36 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	112 nC
Input Capacitance (Ciss) (Max) @ Vds	4785 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Rds On (Max) @ Id, Vgs	90 mOhm
Supplier Device Package	TO-220F-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

FCPF36N60NT Series

Power MOSFET, N-Channel, SUPREMOS®, FAST, 600 V, 36 A, 90 mΩ, TO-220F

Part	Vgs(th) (Max) @ Id	FET Type	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Package / Case
ON Semiconductor FCPF36N60NT	4 V	N-Channel	600 V	112 nC	90 mOhm	-55 °C	150 °C	MOSFET (Metal Oxide)	4785 pF	TO-220F-3	36 A	Through Hole	10 V	30 V	TO-220-3 Full Pack
ON Semiconductor FCPF36N60NT	4 V	N-Channel	600 V	112 nC	90 mOhm	-55 °C	150 °C	MOSFET (Metal Oxide)	4785 pF	TO-220F-3	36 A	Through Hole	10 V	30 V	TO-220-3 Full Pack

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FCPF36N60NT Series

The SupreMOS MOSFET, the next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior switching performance and ruggedness.This SupreMOS MOSFET fits the industry’s AC-DC SMPS requirements for PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications.