Discrete Semiconductor Products

SI8402DB-T1-E1

Obsolete

MOSFET N-CH 20V 5.3A 2X2 4-MFP

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 20V 5.3A 2X2 4-MFP

Technical Specifications

Parameters and characteristics for this part

Specification	SI8402DB-T1-E1

Current - Continuous Drain (Id) (Ta)	5.3 A
Drain to Source Voltage (Vdss)	20 V
FET Type	N-Channel
Gate Charge (Max)	26 nC
Mounting Type	Surface Mount
Package / Case	CSPBGA, 4-XFBGA
Package Name	4-Microfoot
Rds On (Max)	37 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	1 V

Part	Current - Continuous Drain (Id) (Ta)	Gate Charge (Max)	Drain to Source Voltage (Vdss)	Rds On (Max)	Technology	Package Name	Vgs(th) (Max)	Package / Case	FET Type	Mounting Type
Vishay Dale SI8402DB-T1-E1	5.3 A	26 nC	20 V	37 mOhm	MOSFET (Metal Oxide)	4-Microfoot	1 V	4-XFBGA CSPBGA	N-Channel	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

3D models and CAD resources for this part

General part information

N-Channel 20 V 5.3A (Ta) Surface Mount 4-Microfoot

Technical documentation and resources

No documents available