Discrete Semiconductor Products

SI8402DB-T1-E1

Obsolete

MOSFET N-CH 20V 5.3A 2X2 4-MFP

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 20V 5.3A 2X2 4-MFP

Technical Specifications

Parameters and characteristics for this part

Specification	SI8402DB-T1-E1

Current - Continuous Drain (Id) @ 25°C	5.3 A
Drain to Source Voltage (Vdss)	20 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	26 nC
Mounting Type	Surface Mount
Package / Case	CSPBGA, 4-XFBGA
Rds On (Max) @ Id, Vgs	37 mOhm
Supplier Device Package	4-Microfoot
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

Part	Technology	Rds On (Max) @ Id, Vgs	Supplier Device Package	Drain to Source Voltage (Vdss)	Package / Case	Gate Charge (Qg) (Max) @ Vgs	FET Type	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Vgs(th) (Max) @ Id
Vishay General Semiconductor - Diodes Division SI8402DB-T1-E1	MOSFET (Metal Oxide)	37 mOhm	4-Microfoot	20 V	4-XFBGA CSPBGA	26 nC	N-Channel	5.3 A	Surface Mount	1 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 20 V 5.3A (Ta) Surface Mount 4-Microfoot

Technical documentation and resources

No documents available