Discrete Semiconductor Products

VS-80APF12-M3

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DIODE GEN PURP 1.2KV 80A TO247AC

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Discrete Semiconductor Products

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DIODE GEN PURP 1.2KV 80A TO247AC

Technical Specifications

Parameters and characteristics for this part

Specification	VS-80APF12-M3

Current - Average Rectified (Io)	80 A
Current - Reverse Leakage @ Vr	100 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	TO-247-3
Reverse Recovery Time (trr)	480 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-247AC
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.35 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Technology	Mounting Type	Current - Average Rectified (Io)
Vishay General Semiconductor - Diodes Division VS-80APF12-M3	1.2 kV	150 °C	-40 °C	TO-247-3	TO-247AC	1.35 V	200 mA 500 ns	480 ns	100 µA	Standard	Through Hole	80 A

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General part information

Diode 1200 V 80A Through Hole TO-247AC

Technical documentation and resources