Discrete Semiconductor Products

KST14MTF

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NPN EPITAXIAL SILICON TRANSISTOR

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Discrete Semiconductor Products

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NPN EPITAXIAL SILICON TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

Specification	KST14MTF

Current - Collector (Ic) (Max) [Max]	300 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	20000
Frequency - Transition	125 MHz
Mounting Type	Surface Mount
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	350 mW
Supplier Device Package	SOT-23-3
Vce Saturation (Max) @ Ib, Ic	1.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	30 V

NPN Epitaxial Silicon Transistor

Part	Package / Case	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Frequency - Transition	Current - Collector (Ic) (Max) [Max]
ON Semiconductor KST14MTF	SC-59 SOT-23-3 TO-236-3	100 nA	20000	Surface Mount	SOT-23-3	1.5 V	350 mW	30 V	125 MHz	300 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	11500	$ 0.03

General part information

NPN Epitaxial Silicon Transistor

Technical documentation and resources