Discrete Semiconductor Products

SI7848BDP-T1-E3

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MOSFET N-CH 40V 47A PPAK SO-8

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Discrete Semiconductor Products

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MOSFET N-CH 40V 47A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7848BDP-T1-E3

Current - Continuous Drain (Id) @ 25°C	47 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	50 nC
Input Capacitance (Ciss) (Max) @ Vds	2000 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	36 W, 4.2 W
Rds On (Max) @ Id, Vgs	9 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Technology	Vgs(th) (Max) @ Id	Vgs (Max)	Supplier Device Package	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Mounting Type
Vishay General Semiconductor - Diodes Division SI7848BDP-T1-GE3	-55 °C	150 °C	N-Channel	50 nC	PowerPAK® SO-8	4.5 V 10 V	2000 pF	47 A	MOSFET (Metal Oxide)	3 V	20 V	PowerPAK® SO-8	40 V	4.2 W 36 W	9 mOhm	Surface Mount
Vishay General Semiconductor - Diodes Division SI7848BDP-T1-E3	-55 °C	150 °C	N-Channel	50 nC	PowerPAK® SO-8	4.5 V 10 V	2000 pF	47 A	MOSFET (Metal Oxide)	3 V	20 V	PowerPAK® SO-8	40 V	4.2 W 36 W	9 mOhm	Surface Mount

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General part information

N-Channel 40 V 47A (Tc) 4.2W (Ta), 36W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources