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Discrete Semiconductor Products

UF1D

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Taiwan Semiconductor Corporation

50NS, 1A, 200V, HIGH EFFICIENT RECOVERY RECTIFIER

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Symbol, Footprint, 3D Model
Discrete Semiconductor Products

UF1D

Active
Taiwan Semiconductor Corporation

50NS, 1A, 200V, HIGH EFFICIENT RECOVERY RECTIFIER

Technical Specifications

Parameters and characteristics for this part

SpecificationUF1D
Capacitance @ Vr, F17 pF
Current - Average Rectified (Io)1 A
Current - Reverse Leakage @ Vr5 µA
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]150 °C
Operating Temperature - Junction [Min]-55 °C
Package / CaseDO-204AL, DO-41, Axial
Reverse Recovery Time (trr)50 ns
Speed200 mA, 500 ns
Supplier Device PackageDO-204AL (DO-41)
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]200 V
Voltage - Forward (Vf) (Max) @ If1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.49
10$ 0.34
100$ 0.17
500$ 0.14
1000$ 0.10
2000$ 0.09
Tape & Reel (TR) 5000$ 0.08
10000$ 0.07
25000$ 0.07
50000$ 0.06
125000$ 0.06

Description

General part information

UF1D Series

Diode 200 V 1A Through Hole DO-204AL (DO-41)