Discrete Semiconductor Products

6A08-G

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DIODE GEN PURP 800V 6A R-6

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Discrete Semiconductor Products

Active

DIODE GEN PURP 800V 6A R-6

Technical Specifications

Parameters and characteristics for this part

Specification	6A08-G

Capacitance	100 pF
Current - Average Rectified (Io)	6 A
Current - Reverse Leakage	10 µA
Mounting Type	Through Hole
Operating Temperature - Junction (Max)	125 °C
Operating Temperature - Junction (Min)	-55 °C
Package / Case	R-6, Axial
Package Name	R-6
Speed	Standard Recovery
Speed - Fast Recovery (Minimum)	200 mA, 500 ns
Speed - Recovery Current	200 mA, 200 mA
Speed - Recovery Time	500 ns
Technology	Standard
Voltage - DC Reverse (Vr) (Max)	800 V
Voltage - Forward (Vf) (Max)	1 V

Part	Mounting Type	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max)	Capacitance	Voltage - Forward (Vf) (Max)	Operating Temperature - Junction (Max)	Operating Temperature - Junction (Min)	Speed - Fast Recovery (Minimum)	Speed	Speed - Recovery Current	Speed - Recovery Time	Current - Reverse Leakage	Technology	Package Name	Package / Case
Comchip Technology 6A08-G	Through Hole	6 A	800 V	100 pF	1 V	125 °C	-55 °C	200 mA 500 ns	Standard Recovery	200 mA 200 mA	500 ns	10 µA	Standard	R-6	Axial R-6

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3D models and CAD resources for this part

General part information

Diode 800 V 6A Through Hole R-6

Technical documentation and resources

No documents available