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Discrete Semiconductor Products

IXFH20N100P

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Littelfuse/Commercial Vehicle Products

DISCMOSFETN-CH HIPERFET-POLAR TO-247AD/ TUBE

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Discrete Semiconductor Products

IXFH20N100P

Active

Littelfuse/Commercial Vehicle Products

DISCMOSFETN-CH HIPERFET-POLAR TO-247AD/ TUBE

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IXFH20N100P

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	1000 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	126 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	7300 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	660 W
Rds On (Max) @ Id, Vgs [Max]	570 mOhm
Supplier Device Package	TO-247AD (IXFH)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	6.5 V

IXFH20N100P Series

DiscMosfetN-CH HiPerFET-Polar TO-247AD

Part	Supplier Device Package	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Mounting Type	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	FET Type	Technology	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)
Littelfuse/Commercial Vehicle Products IXFH20N85X	TO-247 (IXTH)	850 V	63 nC	TO-247-3	30 V	10 V	-55 °C	150 °C	1660 pF	540 W	Through Hole	330 mOhm	5.5 V	20 A	N-Channel	MOSFET (Metal Oxide)
Littelfuse/Commercial Vehicle Products IXFH20N100P	TO-247AD (IXFH)	1000 V		TO-247-3	30 V	10 V	-55 °C	150 °C		660 W	Through Hole		6.5 V	20 A	N-Channel	MOSFET (Metal Oxide)	570 mOhm	126 nC	7300 pF
Littelfuse/Commercial Vehicle Products IXFH20N80P	TO-247AD (IXFH)	800 V	86 nC	TO-247-3	30 V	10 V	-55 °C	150 °C	4685 pF		Through Hole	520 mOhm	5 V	20 A	N-Channel	MOSFET (Metal Oxide)				500 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 8.99
		30	$ 7.54
Newark	Each	250	$ 8.51
		500	$ 7.90

Description

General part information

IXFH20N100P Series

Ultra-Junction X-Class Power MOSFETs with fast body diodes are rugged devices that display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings

Documents

Technical documentation and resources