Specification	DS1265Y-70+

Access Time	70 ns
Memory Format	NVSRAM
Memory Interface	Parallel
Memory Organization	1M x 8
Memory Size	1024 KB
Memory Type	Non-Volatile
Mounting Type	Through Hole
Operating Temperature [Max]	70 °C
Operating Temperature [Min]	0 °C
Package / Case	36-DIP Module (0.610", 15.49mm)
Supplier Device Package	36-EDIP
Technology	NVSRAM (Non-Volatile SRAM)
Voltage - Supply [Max]	5.5 V
Voltage - Supply [Min]	4.5 V
Write Cycle Time - Word, Page	70 ns

DS1265Y Series

8M Nonvolatile SRAM

Part	Write Cycle Time - Word, Page	Operating Temperature [Min]	Operating Temperature [Max]	Voltage - Supply [Max]	Voltage - Supply [Min]	Package / Case	Memory Type	Mounting Type	Supplier Device Package	Memory Interface	Memory Size	Memory Format	Access Time	Technology	Memory Organization	Write Cycle Time - Word, Page [y]	Write Cycle Time - Word, Page [x]
Analog Devices Inc./Maxim Integrated DS1265Y-70+	70 ns	0 °C	70 °C	5.5 V	4.5 V	36-DIP Module (0.610" 15.49mm)	Non-Volatile	Through Hole	36-EDIP	Parallel	1024 KB	NVSRAM	70 ns	NVSRAM (Non-Volatile SRAM)	1M x 8
Analog Devices Inc./Maxim Integrated DS1265Y-70IND+	70 ns	-40 ¯C	85 C	5.5 V	4.5 V	36-DIP Module (0.610" 15.49mm)	Non-Volatile	Through Hole	36-EDIP	Parallel	1024 KB	NVSRAM	70 ns	NVSRAM (Non-Volatile SRAM)	1M x 8
Analog Devices Inc./Maxim Integrated DS1265Y-100		0 °C	70 °C	5.5 V	4.5 V	36-DIP Module (0.610" 15.49mm)	Non-Volatile	Through Hole	36-EDIP	Parallel	1024 KB	NVSRAM	100 ns	NVSRAM (Non-Volatile SRAM)	1M x 8	100 ns	100 ns
Analog Devices Inc./Maxim Integrated DS1265Y-70	70 ns	0 °C	70 °C	5.5 V	4.5 V	36-DIP Module (0.610" 15.49mm)	Non-Volatile	Through Hole	36-EDIP	Parallel	1024 KB	NVSRAM	70 ns	NVSRAM (Non-Volatile SRAM)	1M x 8
Analog Devices Inc./Maxim Integrated DS1265Y-70IND	70 ns	-40 ¯C	85 C	5.5 V	4.5 V	36-DIP Module (0.610" 15.49mm)	Non-Volatile	Through Hole	36-EDIP	Parallel	1024 KB	NVSRAM	70 ns	NVSRAM (Non-Volatile SRAM)	1M x 8

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	Tube	9	$ 194.80	<4d

Description

General part information

DS1265Y Series

The DS1265 8M Nonvolatile SRAMs are 8,388,608-bit, fully static nonvolatile SRAMs organized as 1,048,576 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCCfor an out-of-tolerance condition. When such a condition occurs the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. There is no limit on the number of write cycles which can be executed and no additional support circuitry is required for microprocessor interfacing.

Documents

Technical documentation and resources

DS1265Y Reliability Data

Reliability Data

DS1265AB-DS1265Y: 8M Nonvolatile SRAM Data Sheet (Rev.3)

Data Sheet