Discrete Semiconductor Products

SMUN5215T1G

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BIPOLAR PRE-BIASED / DIGITAL TRANSISTOR, NPN, 50 V, 100 MA, 10 KOHM

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Discrete Semiconductor Products

Active

BIPOLAR PRE-BIASED / DIGITAL TRANSISTOR, NPN, 50 V, 100 MA, 10 KOHM

Technical Specifications

Parameters and characteristics for this part

Specification	SMUN5215T1G

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	160 hFE
Grade	Automotive
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Power - Max [Max]	202 mW
Qualification	AEC-Q101
Resistor - Base (R1)	10 kOhms
Transistor Type	NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Power - Max [Max]	Resistor - Base (R1)	Current - Collector (Ic) (Max) [Max]	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Qualification	Grade
ON Semiconductor MUN5215T1	202 mW	10 kOhms	100 mA	Surface Mount	160 hFE	500 nA	SC-70 SOT-323	50 V	NPN - Pre-Biased	250 mV
ON Semiconductor SMUN5215T1G	202 mW	10 kOhms	100 mA	Surface Mount	160 hFE	500 nA	SC-70 SOT-323	50 V	NPN - Pre-Biased	250 mV	AEC-Q101	Automotive
ON Semiconductor MUN5215T1G	202 mW	10 kOhms	100 mA	Surface Mount	160 hFE	500 nA	SC-70 SOT-323	50 V	NPN - Pre-Biased	250 mV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Simplifies Circuit Design

Reduces Board Space

Reduces Component Count

Technical documentation and resources