Deep-Dive with AI
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Technical Specifications
Parameters and characteristics for this part
| Specification | VQ1001P-E3 |
|---|---|
| Channel Count | 4 |
| Configuration | N-Channel |
| Current - Continuous Drain (Id) | 830 mA |
| Drain to Source Voltage (Vdss) | 30 V |
| FET Feature | Logic Level Gate |
| Input Capacitance (Ciss) (Max) | 110 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package Name | 14-DIP |
| Power - Max | 2 VA |
| Rds On (Max) | 1.75 Ohm |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | Updated |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 40.00 | 1m+ |
CAD
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Description
General part information
VQ1001 Series
Mosfet Array 30V 830mA 2W Through Hole 14-DIP
Documents
Technical documentation and resources
No documents available