Discrete Semiconductor Products

RJK1003DPP-A0#T2

Active

NCH POWER MOSFET 100V 50A 11MOHM TO-220F

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

NCH POWER MOSFET 100V 50A 11MOHM TO-220F

Technical Specifications

Parameters and characteristics for this part

Specification	RJK1003DPP-A0#T2

Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	59 nC
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	25 W
Rds On (Max) @ Id, Vgs	11 mOhm
Supplier Device Package	TO-220ABA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Nch Power MOSFET 100V 50A 11mohm TO-220F

Part	Technology	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Package / Case	FET Type	Mounting Type	Operating Temperature	Vgs (Max)
Renesas Electronics Corporation RJK1003DPP-A0#T2	MOSFET (Metal Oxide)	TO-220ABA	59 nC	10 V	25 W	50 A	100 V	11 mOhm	TO-220-3	N-Channel	Through Hole	150 °C	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 3.82

General part information

MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness.

Technical documentation and resources