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SOT23
Discrete Semiconductor Products

PMV35EPER

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Nexperia USA Inc.

TRANS MOSFET P-CH 30V 5.3A 3-PIN TO-236AB T/R

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SOT23
Discrete Semiconductor Products

PMV35EPER

Active
Nexperia USA Inc.

TRANS MOSFET P-CH 30V 5.3A 3-PIN TO-236AB T/R

Technical Specifications

Parameters and characteristics for this part

SpecificationPMV35EPER
Current - Continuous Drain (Id) @ 25°C5.3 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs19.2 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]793 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)1.2 W, 480 mW
Rds On (Max) @ Id, Vgs45 mOhm
Supplier Device PackageTO-236AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.55
10$ 0.47
100$ 0.32
500$ 0.25
1000$ 0.21
Digi-Reel® 1$ 0.55
10$ 0.47
100$ 0.32
500$ 0.25
1000$ 0.21
N/A 0$ 1.06
Tape & Reel (TR) 3000$ 0.13
6000$ 0.12
9000$ 0.11
30000$ 0.11
75000$ 0.11

Description

General part information

PMV35EPE Series

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.