Discrete Semiconductor Products

MMDF1N05ER2

Obsolete

ON Semiconductor

POWER MOSFET 50V 2A 300 MOHM DUAL N-CHANNEL SO-8

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Discrete Semiconductor Products

MMDF1N05ER2

Obsolete

ON Semiconductor

POWER MOSFET 50V 2A 300 MOHM DUAL N-CHANNEL SO-8

Deep-Dive with AI

DocumentsDatasheet Datasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	MMDF1N05ER2

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	2 A
Drain to Source Voltage (Vdss)	50 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	12.5 nC
Input Capacitance (Ciss) (Max) @ Vds	330 pF
Mounting Type	Surface Mount
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	2 W
Rds On (Max) @ Id, Vgs	300 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V

MMDF1N05E Series

Power MOSFET 50V 2A 300 mOhm Dual N-Channel SO-8

Part	Current - Continuous Drain (Id) @ 25°C	Configuration	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Mounting Type	Power - Max [Max]	FET Feature	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Technology	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Package / Case	Package / Case [y]	Package / Case [x]
ON Semiconductor MMDF1N05ER2G	2 A	2 N-Channel (Dual)	-55 °C	150 °C	3 V	Surface Mount	2 W	Logic Level Gate	330 pF	50 V	300 mOhm	MOSFET (Metal Oxide)	12.5 nC	8-SOIC	8-SOIC	3.9 mm	0.154 in
ON Semiconductor MMDF1N05ER2	2 A	2 N-Channel (Dual)			3 V	Surface Mount	2 W	Logic Level Gate	330 pF	50 V	300 mOhm	MOSFET (Metal Oxide)	12.5 nC	8-SOIC	8-SOIC	3.9 mm	0.154 in

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

MMDF1N05E Series

These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain-to-source diode has a low reverse recovery time. These devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc-dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.

Documents

Technical documentation and resources