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TO-220AB
Discrete Semiconductor Products

PSMN3R9-60PSQ

Obsolete
Freescale Semiconductor - NXP

MOSFET N-CH 60V 130A TO220AB

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TO-220AB
Discrete Semiconductor Products

PSMN3R9-60PSQ

Obsolete
Freescale Semiconductor - NXP

MOSFET N-CH 60V 130A TO220AB

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationPSMN3R9-60PSQ
Current - Continuous Drain (Id) @ 25°C130 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs103 nC
Input Capacitance (Ciss) (Max) @ Vds5600 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max) [Max]263 W
Rds On (Max) @ Id, Vgs3.9 mOhm
Supplier Device PackageTO-220AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 2.97
10$ 2.49
100$ 2.01
500$ 1.79
1000$ 1.53
2000$ 1.44
5000$ 1.38

Description

General part information

PSMN3R9-25MLC Series

Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.

Documents

Technical documentation and resources