UPA1950TE-T1-AT

Obsolete

POWER MOSFETS FOR AUTOMOTIVE

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Discrete Semiconductor Products

Obsolete

POWER MOSFETS FOR AUTOMOTIVE

Technical Specifications

Parameters and characteristics for this part

Specification	UPA1950TE-T1-AT

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	2.5 A
Drain to Source Voltage (Vdss)	12 V
FET Feature	1.8 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	1.9 nC
Input Capacitance (Ciss) (Max) @ Vds	220 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-95
Power - Max	1.15 W
Rds On (Max) @ Id, Vgs	130 mOhm
Supplier Device Package	SC-95
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.5 V

Power MOSFETs for Automotive

Part	Mounting Type	Package / Case	Power - Max	Operating Temperature	FET Feature	FET Feature	Vgs(th) (Max) @ Id	Supplier Device Package	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Configuration	Rds On (Max) @ Id, Vgs	Technology	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs
Renesas Electronics Corporation UPA1950TE-T1-AT	Surface Mount	SC-95	1.15 W	150 °C	1.8 V	Logic Level Gate	1.5 V	SC-95	12 V	220 pF	2 P-Channel	130 mOhm	MOSFET (Metal Oxide)	2.5 A	1.9 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Pch Dual Power MOSFET -12V -2. 5A 130mohm 6pin TMM/SC-95 Automotive

Technical documentation and resources