Discrete Semiconductor Products

PDTD113ES,126

Obsolete

TRANS PREBIAS NPN 50V TO92-3

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Discrete Semiconductor Products

Obsolete

TRANS PREBIAS NPN 50V TO92-3

Technical Specifications

Parameters and characteristics for this part

Specification	PDTD113ES,126

Current - Collector (Ic) (Max) [Max]	500 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	33
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	500 mW
Resistor - Base (R1)	1 kOhms
Resistor - Emitter Base (R2)	1 kOhm
Supplier Device Package	TO-92-3
Transistor Type	NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Transistor Type	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Resistor - Base (R1)	Current - Collector Cutoff (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Package / Case	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Resistor - Emitter Base (R2)	Vce Saturation (Max) @ Ib, Ic	Mounting Type
Freescale Semiconductor - NXP PDTD113EK,115	NPN - Pre-Biased	MPAK SMT3	50 V	1 kOhms	500 nA	500 mA	SC-59 SOT-23-3 TO-236-3	250 mW	33	1 kOhm	300 mV	Surface Mount
Freescale Semiconductor - NXP PDTD113ES,126	NPN - Pre-Biased	TO-92-3	50 V	1 kOhms	500 nA	500 mA	TO-226-3 TO-92-3	500 mW	33	1 kOhm	300 mV	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 500 mA 500 mW Through Hole TO-92-3

Technical documentation and resources