YQ10RSM10SDTL1
ActiveSCHOTTKY DIODES & RECTIFIERS TRENCH MOS STRUCTURE, 100V, 10A, TO-277A, HIGHLY EFFICIENT SBD: THE YQ10RSM10SD IS A HIGHLY EFFICIENT SCHOTTKY BARRIER DIODE THAT IS DESIGNED IMPROVING THE TRADEOFF BETWEEN LOW VF AND LOW IR. WHILE ITS LOW VF IT ACHIEVES STABLE OPERATION AT HIGH TEMP
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YQ10RSM10SDTL1
ActiveSCHOTTKY DIODES & RECTIFIERS TRENCH MOS STRUCTURE, 100V, 10A, TO-277A, HIGHLY EFFICIENT SBD: THE YQ10RSM10SD IS A HIGHLY EFFICIENT SCHOTTKY BARRIER DIODE THAT IS DESIGNED IMPROVING THE TRADEOFF BETWEEN LOW VF AND LOW IR. WHILE ITS LOW VF IT ACHIEVES STABLE OPERATION AT HIGH TEMP
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Technical Specifications
Parameters and characteristics for this part
| Specification | YQ10RSM10SDTL1 |
|---|---|
| Current - Average Rectified (Io) | 10 A |
| Current - Reverse Leakage @ Vr | 80 µA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | 150 ¯C |
| Package / Case | TO-277, 3-PowerDFN |
| Speed | 500 ns, 200 mA |
| Supplier Device Package | TO-277A |
| Technology | Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 100 V |
| Voltage - Forward (Vf) (Max) @ If [Max] | 670 mV |
Pricing
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Description
General part information
YQ10RSM10SD Series
The YQ10RSM10SD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VFand low IR. While its low VFit achieves stable operation at high temperatures. Ideal for switching power supplies, freewheel diodes, and reverse polarity protection applications. A miniaturized, thin and wireless TO-277 package.
Documents
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