Discrete Semiconductor Products

DKG1020

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LOW RON & GATE THRESHOLD MOSFET

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Discrete Semiconductor Products

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LOW RON & GATE THRESHOLD MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	DKG1020

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	2200 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)	40 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	4.7 mOhm
Supplier Device Package	TO-252
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	FET Type	Technology	Power Dissipation (Max)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Qualification	Operating Temperature	Supplier Device Package	Vgs (Max)	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Grade	Current - Continuous Drain (Id) @ 25°C
Sanken Electric USA Inc. DKG1020	N-Channel	MOSFET (Metal Oxide)	40 W	Surface Mount	2200 pF	2.5 V	100 V	AEC-Q101	150 °C	TO-252	20 V	4.7 mOhm	4.5 V 10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	Automotive	20 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 100 V 20A (Ta) 40W (Tc) Surface Mount TO-252

Technical documentation and resources