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MURB1620CTT4G
Discrete Semiconductor Products

MJB41CT4

Obsolete
ON Semiconductor

6.0 A, 100 V NPN BIPOLAR POWER TRANSISTOR

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MURB1620CTT4G
Discrete Semiconductor Products

MJB41CT4

Obsolete
ON Semiconductor

6.0 A, 100 V NPN BIPOLAR POWER TRANSISTOR

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationMJB41CT4
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]15
Frequency - Transition3 MHz
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-65 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power - Max [Max]2 W
Supplier Device PackageD2PAK
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic1.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]100 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

MJB41C Series

MJB42C is a 100 V PNP bipolar Complementary power transistor. The complementary NPN is MJB41C.

Documents

Technical documentation and resources