
Discrete Semiconductor Products
MJB41CT4
ObsoleteON Semiconductor
6.0 A, 100 V NPN BIPOLAR POWER TRANSISTOR
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Discrete Semiconductor Products
MJB41CT4
ObsoleteON Semiconductor
6.0 A, 100 V NPN BIPOLAR POWER TRANSISTOR
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | MJB41CT4 |
|---|---|
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 15 |
| Frequency - Transition | 3 MHz |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -65 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263AB, TO-263-3 |
| Power - Max [Max] | 2 W |
| Supplier Device Package | D2PAK |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 1.5 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 100 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
MJB41C Series
MJB42C is a 100 V PNP bipolar Complementary power transistor. The complementary NPN is MJB41C.
Documents
Technical documentation and resources