Discrete Semiconductor Products

RN2301,LF

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BIPOLAR TRANSISTORS, PNP BIAS RESISTOR BUILT-IN TRANSISTORS (BRT), 4.7 KΩ/4.7 KΩ, SOT-323(USM)

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Discrete Semiconductor Products

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BIPOLAR TRANSISTORS, PNP BIAS RESISTOR BUILT-IN TRANSISTORS (BRT), 4.7 KΩ/4.7 KΩ, SOT-323(USM)

Technical Specifications

Parameters and characteristics for this part

Specification	RN2301,LF

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	30
Frequency - Transition	200 MHz
Mounting Type	Surface Mount
Package / Case	SOT-323, SC-70
Power - Max [Max]	100 mW
Resistor - Base (R1)	4.7 kOhms
Resistor - Emitter Base (R2)	4.7 kOhms
Supplier Device Package	SC-70
Transistor Type	PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Package / Case	Resistor - Base (R1)	Grade	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Frequency - Transition	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Resistor - Emitter Base (R2)	Transistor Type	Qualification	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type
Toshiba Semiconductor and Storage RN2301,LXHF	SC-70 SOT-323	4.7 kOhms	Automotive	100 mW	500 nA	50 V	200 MHz	100 mA	300 mV	4.7 kOhms	PNP - Pre-Biased	AEC-Q101	SC-70	30	Surface Mount
Toshiba Semiconductor and Storage RN2301,LF	SC-70 SOT-323	4.7 kOhms		100 mW	500 nA	50 V	200 MHz	100 mA	300 mV	4.7 kOhms	PNP - Pre-Biased		SC-70	30	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 MHz 100 mW Surface Mount SC-70

Technical documentation and resources