Discrete Semiconductor Products

SIA419DJ-T1-GE3

Obsolete

MOSFET P-CH 20V 12A PPAK SC70-6

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET P-CH 20V 12A PPAK SC70-6

Technical Specifications

Parameters and characteristics for this part

Specification	SIA419DJ-T1-GE3

Current - Continuous Drain (Id) (Tc)	12 A
Drain to Source Voltage (Vdss)	20 V
FET Type	P-Channel
Gate Charge (Max)	29 nC
Input Capacitance (Ciss) (Max)	1500 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SC-70-6
Package Name	PowerPAK® SC-70-6
Power Dissipation (Max)	3.5 W, 19 W
Rds On (Max)	30 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	5 V
Vgs(th) (Max)	850 mV

Part	Package / Case	Power Dissipation (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Input Capacitance (Ciss) (Max)	Vgs (Max)	Rds On (Max)	Technology	Drain to Source Voltage (Vdss)	Gate Charge (Max)	Package Name	Vgs(th) (Max)	Mounting Type	Current - Continuous Drain (Id) (Tc)	FET Type
Vishay Dale SIA419DJ-T1-GE3	PowerPAK® SC-70-6	3.5 W 19 W	-55 °C	150 °C	1500 pF	5 V	30 mOhm	MOSFET (Metal Oxide)	20 V	29 nC	PowerPAK® SC-70-6	850 mV	Surface Mount	12 A	P-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

P-Channel 20 V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6

Technical documentation and resources

No documents available