Specification	NVMJD027N06CLTWG

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	7.7 A, 21 A
Drain to Source Voltage (Vdss)	60 V
Gate Charge (Qg) (Max) @ Vgs	5 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	335 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-LFPAK56, SOT-1205
Power - Max	24 W, 3.2 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	27 mOhm
Supplier Device Package	8-LFPAK
Vgs(th) (Max) @ Id	2.2 V

NVMJD027N06CL Series

Dual N−Channel Power MOSFET 60V, 21A, 26.5mΩ

Part	Grade	Qualification	Configuration	Package / Case	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Power - Max	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package
ON Semiconductor NVMJD027N06CLTWG	Automotive	AEC-Q101	2 N-Channel (Dual)	8-LFPAK56 SOT-1205	2.2 V	27 mOhm	7.7 A 21 A	5 nC	3.2 W 24 W	-55 °C	175 ░C	Surface Mount	60 V	335 pF	8-LFPAK

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

ON Semiconductor	N/A	1	$ 0.58

Description

General part information

NVMJD027N06CL Series

Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.