Discrete Semiconductor Products

AOI468

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MOSFET N CH 300V 11.5A TO252

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Discrete Semiconductor Products

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MOSFET N CH 300V 11.5A TO252

Technical Specifications

Parameters and characteristics for this part

Specification	AOI468

Current - Continuous Drain (Id) @ 25°C	11.5 A
Drain to Source Voltage (Vdss)	300 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	16 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	790 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-50 °C
Package / Case	TO-251-3 Stub Leads, IPAK
Power Dissipation (Max)	150 W
Rds On (Max) @ Id, Vgs	420 mOhm
Supplier Device Package	TO-251A
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Supplier Device Package	Mounting Type	Technology	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Gate Charge (Qg) (Max) @ Vgs
Alpha & Omega Semiconductor Inc. AOI468	30 V	790 pF	4.5 V	300 V	11.5 A	TO-251-3 Stub Leads IPAK	150 W	-50 °C	175 ░C	420 mOhm	TO-251A	Through Hole	MOSFET (Metal Oxide)	10 V	N-Channel	16 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly