Specification	SSM6N35AFU,LF

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	250 mA
Drain to Source Voltage (Vdss)	20 V
Gate Charge (Qg) (Max) @ Vgs [Max]	0.34 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	36 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-363, SC-88, 6-TSSOP
Power - Max [Max]	285 mW
Rds On (Max) @ Id, Vgs	1.1 Ohm
Supplier Device Package	US6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

SSM6N35 Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch x 2 MOSFET, 20 V, 0.25 A, 1.1 Ω@4.5V, SOT-563(ES6)

Part	Drain to Source Voltage (Vdss)	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Package / Case	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Operating Temperature	FET Feature	Configuration	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	FET Feature	FET Feature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Power - Max [Max]
Toshiba Semiconductor and Storage SSM6N35FE,LM	20 V	MOSFET (Metal Oxide)	9.5 pF	ES6	SOT-563 SOT-666	Surface Mount	180 mA	150 °C	Logic Level Gate	2 N-Channel (Dual)	3 Ohm	1 V
Toshiba Semiconductor and Storage SSM6N35AFE,LF	20 V	MOSFET (Metal Oxide)	36 pF	ES6	SOT-563 SOT-666	Surface Mount	250 mA	150 °C		2 N-Channel (Dual)	1.1 Ohm	1 V	1.2 V	Logic Level Gate	0.34 nC	250 mW
Toshiba Semiconductor and Storage SSM6N35AFU,LF	20 V	MOSFET (Metal Oxide)	36 pF	US6	6-TSSOP SC-88 SOT-363	Surface Mount	250 mA	150 °C		2 N-Channel (Dual)	1.1 Ohm	1 V			0.34 nC	285 mW

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch x 2 MOSFET, 20 V, 0.25 A, 1.1 Ω@4.5V, SOT-563(ES6)

Technical documentation and resources