Discrete Semiconductor Products

NP100P06PDG-E1-AY

Active

MOSFET, P-CH, 60V, 100A, TO-263 ROHS COMPLIANT: YES

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET, P-CH, 60V, 100A, TO-263 ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	NP100P06PDG-E1-AY

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	300 nC
Input Capacitance (Ciss) (Max) @ Vds	15000 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	1.8 W, 200 W
Rds On (Max) @ Id, Vgs	6 mOhm
Supplier Device Package	TO-263
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.5 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Vgs(th) (Max) @ Id [Max]	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Technology	Vgs (Max)	Operating Temperature	Rds On (Max) @ Id, Vgs	Supplier Device Package	Drain to Source Voltage (Vdss)
Renesas Electronics Corporation NP100P06PDG-E1-AY	300 nC	100 A	1.8 W 200 W	2.5 V	P-Channel	4.5 V 10 V	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	15000 pF	MOSFET (Metal Oxide)	20 V	175 °C	6 mOhm	TO-263	60 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 60 V 100A (Tc) 1.8W (Ta), 200W (Tc) Surface Mount TO-263

Technical documentation and resources